650 V GaN HEMTs

ROHM has developed the GNP2070TD-Z, a 650 V GaN HEMT in the TOLL (TO-leadless) package. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, it is ideal for high-density power systems. The TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), an experienced OSAT (outsourced semiconductor assembly and test) provider.

Improving the efficiency of motors and power supplies, which account for most of the electrical consumption in the world, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (silicon carbide) and GaN is expected to further enhance the efficiency of power supplies.

ROHM began mass production of its 1^st generation of its 650 V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650 V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2^nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen the 650 V GaN HEMT package lineup from ROHM, meeting the market demand for even smaller and more efficient high-power applications.

These products integrate 2^nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (R_DS(ON) × Q_oss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.

To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.

In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.