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N-Channel 1200 V 83A 366W (Ta) Through Hole TO-247-4L
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N-Channel 1200 V 83A 366W (Ta) Through Hole TO-247-4L
GE1208309A1

GE1208309A1

DigiKey Part Number
4014-GE1208309A1-ND
Manufacturer
Manufacturer Product Number
GE1208309A1
Description
SiC MOSFET N-Channel 1200V 83A
Customer Reference
Detailed Description
N-Channel 1200 V 83A 366W (Ta) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
27mOhm @ 55A, 20V
Mfr
Vgs(th) (Max) @ Id
4V @ 13mA
Packaging
Retail Package
Gate Charge (Qg) (Max) @ Vgs
127 nC @ 900 V
Part Status
Active
Vgs (Max)
+23V, -15V
FET Type
Input Capacitance (Ciss) (Max) @ Vds
3124 pF @ 500 V
Technology
Power Dissipation (Max)
366W (Ta)
Drain to Source Voltage (Vdss)
1200 V
Operating Temperature
-55°C ~ 200°C (TJ)
Current - Continuous Drain (Id) @ 25°C
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
20V
Supplier Device Package
TO-247-4L
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 1,098
Non-Cancelable/Non-Returnable
MARKETPLACE PRODUCT
Will ship in approximately 15 days from GE Aerospace
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All prices are in USD
Retail Package
QuantityUnit PriceExt Price
1$15.00000$15.00