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IMW65R050M2HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMW65R050M2HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMW65R050M2HXKSA1 |
Description | SILICON CARBIDE MOSFET |
Manufacturer Standard Lead Time | 52 Weeks |
Customer Reference | |
Detailed Description | N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40 |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 5.6V @ 3.7mA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V |
Series | Vgs (Max) +23V, -7V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 400 V |
Part Status Active | Power Dissipation (Max) 153W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package PG-TO247-3-40 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V | Base Product Number |
Rds On (Max) @ Id, Vgs 46mOhm @ 18.2A, 20V |
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In-Stock: 1,477
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Maximum purchase limit
To support all customers' research and development needs, this product has a maximum purchase limit. This limit may be purchased every 30 days and any orders above the limit may be cancelled.
| Tube: | 240 |
Quantity
All prices are in USD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $9.84000 | $9.84 |
| 30 | $5.78200 | $173.46 |
| 60 | $5.29767 | $317.86 |
| 120 | $4.89042 | $586.85 |
| 510 | $4.23739 | $2,161.07 |
Tariff Status: Tariff may apply if shipping to the United States. Tariff costs are calculated and will be displayed in the shopping cart.
