N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8
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IMZA65R020M2HXKSA1

DigiKey Part Number
448-IMZA65R020M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R020M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
52 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.6V @ 9.5mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Series
Vgs (Max)
+23V, -7V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2038 pF @ 400 V
Part Status
Active
Power Dissipation (Max)
273W (Tc)
FET Type
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-4-8
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Base Product Number
Rds On (Max) @ Id, Vgs
18mOhm @ 46.9A, 20V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 960
Check for Additional Incoming Stock
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$18.33000$18.33
30$11.30633$339.19
60$10.47050$628.23
120$9.76775$1,172.13
510$9.11243$4,647.34
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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