N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
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IMZA65R027M1HXKSA1

DigiKey Part Number
448-IMZA65R027M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R027M1HXKSA1
Description
MOSFET 650V NCH SIC TRENCH
Customer Reference
Detailed Description
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R027M1HXKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
5.7V @ 11mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Series
Vgs (Max)
+23V, -5V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2131 pF @ 400 V
Part Status
Not For New Designs
Power Dissipation (Max)
189W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-4-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
18V
Base Product Number
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V
Associated Products
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
MSC015SMA070B4Microchip Technology5150-MSC015SMA070B4-ND$19.49000Similar
In-Stock: 514
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Tube
QuantityUnit PriceExt Price
1$15.91000$15.91
30$9.74167$292.25
60$9.00750$540.45
120$8.39017$1,006.82
510$7.71900$3,936.69
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