IPW65R080CFDFKSA2 is out of stock and can be placed on backorder.
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N-Channel 650 V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 650 V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
PG-TO247-3

IPW65R080CFDFKSA2

DigiKey Part Number
448-IPW65R080CFDFKSA2-ND
Manufacturer
Manufacturer Product Number
IPW65R080CFDFKSA2
Description
MOSFET N-CH 650V 43.3A TO247-3
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
Datasheet
 Datasheet
EDA/CAD Models
IPW65R080CFDFKSA2 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4.5V @ 1.8mA
Mfr
Gate Charge (Qg) (Max) @ Vgs
167 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
5030 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
391W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
PG-TO247-3
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
80mOhm @ 17.6A, 10V
Associated Products
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCH085N80-F155onsemi377FCH085N80-F155-ND$18.19000Similar
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STW45N65M5STMicroelectronics174497-12938-5-ND$9.52000Similar
STW50N65DM2AGSTMicroelectronics345497-16138-5-ND$7.85000Similar
TK31N60W,S1VFToshiba Semiconductor and Storage0TK31N60WS1VF-ND$7.53000Similar
In-Stock: 0
30 expected in stock on 19-Apr-2027
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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$9.42000$9.42
30$5.51333$165.40
60$5.04750$302.85
120$4.65558$558.67
510$4.02710$2,053.82
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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