N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
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IRFBG30PBF

DigiKey Part Number
IRFBG30PBF-ND
Manufacturer
Manufacturer Product Number
IRFBG30PBF
Description
MOSFET N-CH 1000V 3.1A TO220AB
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBG30PBF Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Packaging
Tube
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 25 V
FET Type
Power Dissipation (Max)
125W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
1000 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IRFBG30PBF-BE3Vishay Siliconix980742-IRFBG30PBF-BE3-ND$4.09000Direct
IXTP3N100PIXYS0IXTP3N100P-ND$2.97990Similar
STP2N95K5STMicroelectronics956497-14280-5-ND$2.23000Similar
STP5NK100ZSTMicroelectronics0497-4382-5-ND$5.51000Similar
In-Stock: 3,234
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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$4.09000$4.09
10$2.67000$26.70
50$2.06140$103.07
100$1.86530$186.53
500$1.52148$760.74
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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