N-Channel 650 V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
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SIHF6N65E-GE3

DigiKey Part Number
SIHF6N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHF6N65E-GE3
Description
MOSFET N-CH 650V 7A TO220
Manufacturer Standard Lead Time
48 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
820 pF @ 100 V
FET Type
Power Dissipation (Max)
31W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
STF11N65M5STMicroelectronics850497-13160-ND$2.81000Similar
STF8N65M5STMicroelectronics0497-11398-5-ND$3.54000Similar
In-Stock: 1,000
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All prices are in USD
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QuantityUnit PriceExt Price
1$3.39000$3.39
10$2.20500$22.05
50$1.69320$84.66
100$1.52850$152.85
500$1.23948$619.74
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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