650V GaN Bi-Directional Switch from Renesas PIO | DigiKey

This video features the Renesas TP65B110HRU-TR, a 650V GaN bidirectional switch that blocks positive and negative currents in one device. It offers ±800V transient capability, high dv/dt immunity, and standard gate driver compatibility. The Renesas TP65B110HRU-TR is the industry's first 650V-class Gallium Nitride (GaN) bidirectional switch, designed to simplify high-power conversion by replacing traditional back-to-back FET configurations. Built on the Renesas SuperGaN platform, this device blocks both positive and negative currents with a single component, enabling highly efficient single-stage power architectures for solar microinverters and AI datacenters. Technical highlights include a ±650V continuous rating (±800V transient), a 110 mΩ typical on-resistance, and a high 3V gate threshold for noise immunity. It supports a wide ±20V gate-source range and is compatible with standard silicon drivers, eliminating the need for negative gate bias. With >100V/ns dv/dt immunity and low reverse conduction loss, it provides robust performance in hard-switching applications. The top-side-cooled TOLT package ensures optimal thermal management for high-density designs.